| PART |
Description |
Maker |
| APT36N90BC3G |
Super Junction MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 36; RDS(on) (Ohms): 0.12; BVDSS (V): 900; 36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi Corporation
Microsemi, Corp.
|
| STW88N65M5 STWA88N65M5 |
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 package
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 long leads package
|
ST Microelectronics
|
| STW88N65M5 |
N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh V Power MOSFET in TO-247 and TO-247 long leads packages
|
STMicroelectronics
|
| STW75NF20 |
N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in TO-247 package
|
ST Microelectronics
|
| STW47NM60ND |
N-channel 600 V, 0.075 Ω typ., 35 A FDmesh II Power MOSFET (with fast diode) in a TO-247 package
|
STMicroelectronics
|
| STW11NK90Z |
N-channel 900 V, 0.82 Ohm typ., 9.2 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 package
|
ST Microelectronics
|
| STW54NM65ND |
N-channel 650 V, 0.055 Ohm typ., 49 A FDmesh(TM) II Power MOSFET (with fast diode) in a TO-247 package
|
ST Microelectronics
|
| PT6318 |
Power Switch ICs for Express Card™; Package: SSOP-B20; Constitution materials list: Packing style: Tube packaging; Package quantity: 25
|
Princeton Technology Corporation
|
| APT4012BVFR APT4012SVFR APT4012BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 37; RDS(on) (Ohms): 0.12; BVDSS (V): 400; 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
POWER MOS V FREDFET
|
Microsemi, Corp.
Advanced Power Technology
|
| STWA20N95K5 |
N-channel 950 V, 0.275 Ohm typ., 17.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-247 long leads package
|
ST Microelectronics
|
| IRFPS38N60 IRFPS38N60L |
600V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
SMPS MOSFET
|
IRF[International Rectifier]
|
| APT30D100BCT_05 APT30D100BCT APT30D100BCTG APT30D1 |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Fast Recovery Epitaxial Diode; Package: TO-247 [B]; IO (A): 30; VR (V): 1000; trr (nsec): 29; VF (V): 2.3; Qrr (nC): 2350; 30 A, 1000 V, SILICON, RECTIFIER DIODE, TO-247
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
